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Room temperature ferromagnetism in Tb doped ZnO nanocrystalline films |
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| Authors: | Z WuXC Liu JCA Huang |
| Institution: | a National Laboratory of Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China b Research and Development Center, Tianwei New Energy Holdings Co. Ltd., Chengdu 610200, China c Department of Physics and Institute of Innovations and Advanced Studies (IIAS), National Cheng Kung University, Tainan 701, Taiwan |
| Abstract: | Nanocrystalline Tb doped ZnO films have been prepared by ion-beam sputtering technology. Magnetic property shows that the films are ferromagnetic and the Curie Temperature (Tc) is over room temperature. Structure property investigation indicates that no secondary phase is found in all the films, which suggests that the ferromagnetism is caused by the incorporation of Tb into ZnO lattice. The saturation magnetization of the films are about 0.38 μb/Tb. Electrical property investigation proves that the carriers of the films are strongly localized, which suggests that the ferromagnetism in the film may be caused by the defects in the films. |
| Keywords: | Magnetic semiconductor Silicon Magnetism |
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