Sixteen-state magnetic memory based on the extraordinary Hall effect |
| |
| Authors: | A SegalM Karpovski A Gerber |
| |
| Institution: | Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv 69978, Tel Aviv, Israel |
| |
| Abstract: | We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells. |
| |
| Keywords: | Multi-bit magnetic memory Extraordinary Hall effect |
| 本文献已被 ScienceDirect 等数据库收录！ |
