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Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface |
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| Authors: | Takehiro Yamaguchi Kazuyuki IguchiRai Moriya Tomoki Machida |
| Institution: | a Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan b Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan c PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan |
| Abstract: | We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of ∼30 Ω has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene. |
| Keywords: | Spin injection Graphene Tunnel barrier Atomic layer deposition |
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