Photocurrent effect on the zero-Bias dynamic resistance of HgCdTe photodiode |
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Authors: | Kwan Kim Han Jung Hyungcheol Shin Hee Chul Lee Choong-Ki Kim |
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Institution: | (1) Department of Electrical Engineering and Center for Electro-Optics, Korea Advanced Institute of Science and Technology, 305-701 373-1 Kusong-dong, Yusong-gu, Taejon, Korea |
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Abstract: | A new physical model is presented for the illumination-dependence of the zero-bias resistance-area product (R0A) of HgCdTe photodiode. The model is based on three independent mechanisms. They are the depletion region volume change with
the applied bias, the diffusion distance change with the moving depletion region edge, and the minority carrier accumulation
in the depletion region which affects the minority carrier diffusion. Analytic equations are derived for the photodiode current-voltage
characteristics and R0A products. The results of the model have been compared with experimental data obtained from several Hg0.7Cd0.3Te diodes with an identical diode structure having different absorbing amount of light. The model showed good agreement with
the experimental data. |
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Keywords: | Depletion region HgCdTe photocurrent R0A |
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