Polymorphism in Cu-substituted GaV4S8: structural and electronic properties

The hexagonal and cubic phases of Ga_1−xCu_xV₄S₈ are obtained by different methods of preparation. The reaction of elements above 900 °C gives hexagonal phases for large range of x=0.02-0.5. These are metallic and show enhanced paramagnetism. The reduction of oxides by H₂S at a lower temperature of 700 °C gives non-stoichiomertic compositions of cubic-V₄ cluster compound GaV₄S₈. The solubility of Cu-atoms in cubic phase is less than 10% and above x=0.2 the samples contain a mixture of phases, Cu_xVS₂, Ga_xVS₂ and CuGaS₂. The cubic phases are insulating and show Mott's Variable Range Hopping conduction. The non-stoichiomerty and the Cu-substitution reduce the resistivity and thermopower. For x=0.15 and 0.20, the additional peaks are observed in X-ray patterns. These compositions showed a sharp metal to insulator transition on cooling below 180 K. The transitional behaviour is very similar to that previously reported intercalated VS₂ compound Al_xVS₂. The transport and magnetic properties of these phases are discussed in terms of the clustering interactions among V-atoms and the localisation of carriers on the metallic clusters frequently found in V-chalcogenides.