Growth of rare earth silicides on silicon

Dysprosium metal layers deposited on (100)Si substrates were annealed in situ at 300 °C for different time intervals in order to produce DySi_2−x layers at several stages of growth. Electron microscopy work showed that silicon reacts with Dy metal through the simultaneous growth of an amorphous interlayer and a polycrystalline phase to form DySi_2−x. Compressive stresses due to volumetric changes during the reaction deform the produced silicide layer and induce roughness at the surface and interface.