| Thermal stability of HfO2/Si（001） films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen |
| |
| 引用本文： | 徐闰,贡伟明,阎志军,王林军,夏义本. Thermal stability of HfO2/Si（001） films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen[J]. 中国物理 B, 2010, 19(12): 581-585 |
| |
| 作者姓名： | 徐闰 贡伟明 阎志军 王林军 夏义本 |
| |
| 作者单位： | [1]School of Materials Science ＆ Engineering, Shanghai University, Shanghai 200072, China [2]Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 60877017), the Shanghai Leading Academic Disciplines Foundation (Grant No. S30107), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 08YZ04). |
| |
| 摘 要： | HfO2 films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen.Synchrotron radiation photon-electron spectroscopy was used to investigate the thermal stability of HfO2 films under an ultrahigh vacuum environment.At the temperature of 750℃,HfO2 films begin to decompose.After being further annealed at 850℃ for 3 min,HfO2 films decomposes completely,partially to form Hf-silicide and partially to form gaseous HfO.Two chemical reactions are responsible for this decomposition process.A small amount of Hf-silicide,which is formed at the very beginning of growth,may result in the films grown subsequently to be loosened,and thereby leads to a relatively low decomposition temperature.
|
| 关 键 词： | surface and interface high-k oxides photon-electron spectroscopy |
| 修稿时间： | 2010-07-06 |
Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen |
| |
| Xu Run,Gong Wei-Ming,Yan Zhi-Jun,Wang Lin-Jun and Xia Yi-Ben. Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen[J]. Chinese Physics B, 2010, 19(12): 581-585 |
| |
| Authors: | Xu Run Gong Wei-Ming Yan Zhi-Jun Wang Lin-Jun Xia Yi-Ben |
| |
| Affiliation: | School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China;School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China;Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China;School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China |
| |
| Abstract: | surface and interface, high-k oxides, photon-electron spectroscopy |
| |
| Keywords: | surface and interface high-k oxides photon-electron spectroscopy |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
