Some peculiarities of the EPR spectra of radiation-induced defects in LiF and NaF crystals

To refine the structure of radiation-induced defects, a comparison is made of the EPR spectra of LiF and NaF crystals with various constituent impurities γ-irradiated with different doses, as well as the experimentally measured and calculated intensity distributions of HFS lines in the EPR spectra of these crystals. It is shown that the F-centers, whose model represents an ionized quasimolecule consisting of two metal atoms on each side of a halide vacancy, are responsible for the broad band observed independently of the impurity composition of the crystals and irradiation dose, while the HFS is caused by defects based on interstitial halide atoms. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 455–459, May–June, 1998.