Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110) |
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Authors: | Ebert P Urban K Aballe L Chen C H Horn K Schwarz G Neugebauer J Scheffler M |
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Institution: | Institut für Festk?rperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany. |
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Abstract: | The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+/-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric. |
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