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Quantum percolation tunneling current 1/f~γ noise model for high-κ gate stacks Bi-layer breakdown
基金项目:supported by the National Natural Science Foundation of China(Grant Nos.61076101 and 61204092)
摘    要:Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD(Power Spectral Density)for three stages,namely the fresh device,one-layer BD(breakdown),and two-layer BD,increases from 10-22→10-14→10-8 A2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f2type(γ→2),1/fγ type(γ→1~2),and 1/f type(γ→1),respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.

关 键 词:/fγ noise  quantum percolation tunneling  MOSFETs  high-κ gate stacks  Bi-layer breakdown
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