Field-induced negative differential spin lifetime in silicon |
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Authors: | Li Jing Qing Lan Dery Hanan Appelbaum Ian |
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Affiliation: | Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA. |
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Abstract: | We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte?Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime. |
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