| Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator |
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| 作者姓名： | 李运涛 余金中 陈媛媛 孙飞 陈少武 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported in part by the National Key Basic Research Special Foundation of China under Grant No G2000-03-66, and the National High Technology Programme of China under Grant No 2002AA312060, and the National Natural Science Foundation of China under Grant No 60336010. |
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| 摘 要： |
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| 关 键 词： | 光学衰减器 温度 硅绝缘体 多状态干扰 |
| 收稿时间： | 2006-9-14 |
| 修稿时间： | 2006-09-14 |
Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator |
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| LI Yun-Tao,YU Jin-Zhong,CHEN Yuan-Yuan,SUN Fei,CHEN Shao-Wu.Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator[J].Chinese Physics Letters,2007,24(2):465-467. |
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| Authors: | LI Yun-Tao YU Jin-Zhong CHEN Yuan-Yuan SUN Fei CHEN Shao-Wu |
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| Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 |
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| Abstract: | The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3 dB to i dB as the temperature increases from 273K to 343K. |
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| Keywords: | 42 88 +h 42 82 Et |
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