| Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE |
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| 引用本文： | 魏同波 马平 段瑞飞 王军喜 李晋闽 曾一平. Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE[J]. 中国物理快报, 2007, 24(3): 822-824 |
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| 作者姓名： | 魏同波 马平 段瑞飞 王军喜 李晋闽 曾一平 |
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| 作者单位： | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the National High Technology Programme of China under Grant No 2004AA311040. |
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| 摘 要： | Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy （HVPE） reactor. The optical and structural properties of large scale columnar domains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar domains show a strong emission intensity due to extremely high free carrier concentration up to 2 × 10^19 cm^-3, which are related with impurities trapped in structural defects. The compressive stress in GaN film clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.
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| 关 键 词： | 柱形结构 压力松弛法 薄膜生长 蓝宝石 |
| 收稿时间： | 2006-09-05 |
| 修稿时间： | 2006-09-05 |
Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE |
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| WEI Tong-Bo,MA Ping,DUAN Rui-Fei,WANG Jun-Xi,LI Jin-Min,ZENG Yi-Ping. Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE[J]. Chinese Physics Letters, 2007, 24(3): 822-824 |
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| Authors: | WEI Tong-Bo MA Ping DUAN Rui-Fei WANG Jun-Xi LI Jin-Min ZENG Yi-Ping |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences |
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| Abstract: | Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structural properties of large scale columnar domains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar domains show a strong emission intensity due to extremely high free carrier concentration up to 2×1019cm-3, which are related with impurities trapped in structural defects. The compressive stress in GaN film clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer. |
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| Keywords: | 78.30.Fs 81.15.Kk 63.20.Dj 78.60.Hk |
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