| Silicon Light Emitting Devices in CMOS Technology |
| |
| 作者姓名： | 陈弘达 刘海军 刘金彬 顾明 黄北举 |
| |
| 作者单位： | State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| |
| 基金项目： | Supported by the State Key Programme of National Natural Science Foundation of China under Grant No 60536030, and the National High Technology Research and Development Programme of China under Grant No 2005AA311030. |
| |
| 摘 要： | Two silicon light emitting devices with different structures are realized in standard 0.35pro complementary metal-oxide-semiconductor （CMOS） technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 n W are measured at 10 V and l OOmA, respectively~ and both the calculated light emission intensities are more than 1 mW/cm^2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.
|
| 关 键 词： | 硅元素 光发射 CMOS技术 物理学 |
| 修稿时间： | 2006-08-03 |
Silicon Light Emitting Devices in CMOS Technology |
| |
| CHEN Hong-Da,LIU Hai-Jun,LIU Jin-Bin,GU Ming,HUANG Bei-Ju.Silicon Light Emitting Devices in CMOS Technology[J].Chinese Physics Letters,2007,24(1):265-267. |
| |
| Authors: | CHEN Hong-Da LIU Hai-Jun LIU Jin-Bin GU Ming HUANG Bei-Ju |
| |
| Institution: | State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| |
| Abstract: | |
| |
| Keywords: | 85 60 Jb 42 82 Ds 78 20 Jq |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
| 点击此处可从《中国物理快报》下载免费的PDF全文 |
