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Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
引用本文:刘波 冯高明 吴良才 宋志棠 刘奇斌 封松林 CHEN Bomy. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode[J]. 中国物理快报, 2007, 24(1): 262-264
作者姓名:刘波 冯高明 吴良才 宋志棠 刘奇斌 封松林 CHEN Bomy
作者单位:[1]Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA
基金项目:Supported by the National Basic Research Program of China under Grant No 2006CB302700, Chinese Academy of Sciences (Y2005027), and the Science and Technology Council of Shanghai (05JC14076, 0552nm043, AM0517, 06QA14060, 06XD14025, 0652nm003, 06DZ22017).
摘    要:In order to reduce the reset current of cllalcogenide random access memory; a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.184-μm technology, is proposed for the first time to achieve a reset current of about 0.5 mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.

关 键 词:硫族化合物 记忆细胞 加热器 电极
修稿时间:2006-09-18

Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
LIU Bo,FENG Gao-Ming,WU Liang-Cai,SONG Zhi-Tang,LIU Qi-Bin,FENG Song-Lin,CHEN Bomy. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode[J]. Chinese Physics Letters, 2007, 24(1): 262-264
Authors:LIU Bo  FENG Gao-Ming  WU Liang-Cai  SONG Zhi-Tang  LIU Qi-Bin  FENG Song-Lin  CHEN Bomy
Affiliation:Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA
Abstract:
Keywords:85.35.-p  85.30.De  73.90.+f
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