| Effect of Bias on Content of GeC in Ge1-xCx Films |
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| 作者姓名： | 展长勇 王立无 黄宁康 |
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| 作者单位： | Key Laboratory of Radiation and Technology of Education Ministry, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 |
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| 摘 要： |
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| 关 键 词： | 薄膜物理学 性质 偏压 薄膜测定 |
| 收稿时间： | 2006-10-12 |
| 修稿时间： | 2006-10-12 |
Effect of Bias on Content of GeC in Ge 1-x Cx Films |
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| ZHAN Chang-Yong,WANG Li-Wu,HUANG Ning-Kang.Effect of Bias on Content of GeC in Ge1-xCx Films[J].Chinese Physics Letters,2007,24(3):803-806. |
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| Authors: | ZHAN Chang-Yong WANG Li-Wu HUANG Ning-Kang |
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| Institution: | Key Laboratory of Radiation and Technology of Education Ministry, Institute of Nuclear Science and Technology Sichuan University, Chengdu 610064 |
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| Abstract: | Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films consist of C, Ge, GeC and GeOy. The content of GeC increases from 10.7% at 0 V to 11.6% at 250 V, and decreases to 9.6% at 350 V, and then increases again to 10.4% at 450 V. The Raman analysis confirms the result of XPS for checking GeC in the deposited Ge1-x Cx films. The related mechanism is discussed. |
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| Keywords: | 68 55 Nq 85 40 Sz 33 60 Fy 87 64 Je |
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