| Growth and Characterization of InN Thin Films on Sapphire by MOCVD |
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| 引用本文： | 谢自力 张荣 修向前 刘斌 李亮 韩平 顾书林 施毅 郑有炓. Growth and Characterization of InN Thin Films on Sapphire by MOCVD[J]. 中国物理快报, 2007, 24(4): 1004-1006 |
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| 作者姓名： | 谢自力 张荣 修向前 刘斌 李亮 韩平 顾书林 施毅 郑有炓 |
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| 作者单位： | Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 |
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| 基金项目： | Supported by the Special Funds for Major State Basic Research Project of China under Grant No 2006CB6049, the National Natural Science Foundation of China under Grant Nos 6039072, 60476030, 60421003 and 60676057, the Ministry of Education of China （10416）, the Research Fund for the Doctoral Programme of Higher Education of China （20050284004）, and the Natural Science Foundation of Jiangsu Province （BK2005210 and BK2006126）. |
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| 摘 要： | Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.
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| 关 键 词： | 薄膜 蓝宝石 增长性 氮化物 |
| 收稿时间： | 2006-12-16 |
| 修稿时间： | 2006-12-16 |
Growth and Characterization of InN Thin Films on Sapphire by MOCVD |
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| XIE Zi-Li,ZHANG Rong,XIU Xiang-Qian,LIU Bin,LI Liang,HAN Ping,GU Shu-Lin,SHI Yi,ZHENG You-Dou. Growth and Characterization of InN Thin Films on Sapphire by MOCVD[J]. Chinese Physics Letters, 2007, 24(4): 1004-1006 |
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| Authors: | XIE Zi-Li ZHANG Rong XIU Xiang-Qian LIU Bin LI Liang HAN Ping GU Shu-Lin SHI Yi ZHENG You-Dou |
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| Affiliation: | Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 |
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| Abstract: | Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition (MOCVD). By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, hotoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939cm2/Vs,and 3.9×1018cm-3, respectively. |
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| Keywords: | 61.10.Nz 81.15.Hi 78.55.Cr 68.55.Jk |
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