| Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application |
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| 作者姓名： | 吴良才 宋志棠 饶峰 徐成 张挺 殷伟君 封松林 |
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| 作者单位： | Nanotechnology Laboratory, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| 基金项目： | Supported by the National Basic Research Program of China under Grant No 2006CB302700, the National High Technology Development Programme of China under Grant No 2006AA03Z360~ Chinese Academy of Sciences （Y2005027）, Science and Technology Council of Shanghai under Grant Nos AM0517, 05JC14076, 0552nm043, 06QA14060, 06XD14025, 0652nm003, and 06DZ22017, the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation （Hong Kong）. |
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| 摘 要： | We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.
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| 关 键 词： | 电阻 等离子 氧化物 薄膜 |
| 收稿时间： | 2006-8-28 |
| 修稿时间： | 2006-08-28 |
Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application |
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| WU Liang-Cai,SONG Zhi-Tang,LIU Bo,RAO Feng,XU Cheng,ZHANG Ting,YIN Wei-Jun,FENG Song-Lin.Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application[J].Chinese Physics Letters,2007,24(4):1103-1105. |
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| Authors: | WU Liang-Cai SONG Zhi-Tang LIU Bo RAO Feng XU Cheng ZHANG Ting YIN Wei-Jun FENG Song-Lin |
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| Institution: | Nanotechnology Laboratory, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Abstract: | |
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| Keywords: | 84 37 +q 85 50 -n 73 61 -r |
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