| 半导体浪涌保护器基区参数探讨 |
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| 引用本文： | 苑莉,余岳辉.半导体浪涌保护器基区参数探讨[J].微电子学,1996,26(6):387-389. |
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| 作者姓名： | 苑莉 余岳辉 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 讨论了半导体浪涌保护器件的基区宽度，着重分析了基区宽度与开通电压、静电电容、浪涌能力的关系，指出控制基区宽度，可有效地提高器件的浪涌能力，降低静电电容和开通电压
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| 关 键 词： | 半导体器件 浪涌保护器 基区宽度 |
A Study on the Base Parameter of Surge Protection Semiconductor Devices |
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| YUAN Li and YU Yuehui Dept. of Solid State Electronics,Huazhong Univ. of Sci. and Technol.Wuhan,Hubei.A Study on the Base Parameter of Surge Protection Semiconductor Devices[J].Microelectronics,1996,26(6):387-389. |
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| Authors: | YUAN Li and YU Yuehui Dept of Solid State Electronics Huazhong Univ of Sci and TechnolWuhan Hubei |
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| Institution: | YUAN Li and YU Yuehui Dept. of Solid State Electronics,Huazhong Univ. of Sci. and Technol.Wuhan,Hubei 430074 |
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| Abstract: | A surge protection semiconductor device has been developed to suppress lightning surge and protect electronic systems.Base width,which is the important parameter of the device,is discussed in particular.The dependence of on state voltage,static capacitance and surge capability on the base width is analyzed with emphasis.It is concluded that controlling base width properly can effectively decrease on state voltage and static capacitance,and improve surge capability of the device. |
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| Keywords: | Semiconductor device Surge protection circuit Base width EEACC 1210 2560H |
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