有并联电导的调制掺杂N-Al_xGa_(1-x)As/GaAs异质结 |
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引用本文: | 朱詠堂,周海平,董谋群,江丕桓,孙殿照,陈宗圭,曾一平.有并联电导的调制掺杂N-Al_xGa_(1-x)As/GaAs异质结[J].固体电子学研究与进展,1988(1). |
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作者姓名: | 朱詠堂 周海平 董谋群 江丕桓 孙殿照 陈宗圭 曾一平 |
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作者单位: | 中国科学院半导体研究所
(朱詠堂,周海平,董谋群,江丕桓,孙殿照,陈宗圭),中国科学院半导体研究所(曾一平) |
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基金项目: | 国家自然科学基金资助课题 |
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摘 要: | 在分子束外延生长的调制掺杂N-A1_xGa_(1-x)As/GaAs异质结中,在Al_xG_a_(1-x)As层中常出现载流子未耗尽的薄层,对二维电子气会形成一个并联电导层。本文研究了有并联电导时这种结构在低温强磁场下的输运特性。
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Modulation-Doped N-AI_xGa_(1-x)As/GaAs Heterojunction with Parallel Conductance |
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Abstract: | Modulation-doped AlxGa1-As/GaAs heterojunctions grown by molecular-beam epitaxy with parallel conductance were studied by the low temperature transport measurements in the strong magnetic field. The parallel conducting layer was the undepleted region in AlxGa1-xAs. |
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