Fully Depletion of Advanced Silicon on Insulator MOSFETs |
| |
| Authors: | M.K. Md Arshad N. Othman U. Hashim |
| |
| Affiliation: | Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Kangar, Perlis, Malaysia |
| |
| Abstract: | Scaling of the transistor has been tremendous successful in the beginning with reduction of the gate oxide thickness and increase of doping concentration. Moving into smaller dimension, those are not enough to overcome the short channel effect. Starting with changing in materials and followed by device architecture is needed which require fully depletion operation. This article reviews the fully-depletion operation of thin body of silicon on insulator of advanced MOSFETs. |
| |
| Keywords: | fully-depletion SOI MOSFETs thin-body and thin-buried oxide (UTBB) |
|
