Fluorine in silicon: diffusion,trapping, and precipitation |
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Authors: | Pi X D Burrows C P Coleman P G |
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Institution: | Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom. |
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Abstract: | The effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12+/-0.08 eV. After a long annealing time at 700 degrees C, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. |
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