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High-pressure Raman study of Ba doped silicon clathrate
Authors:Kume Tetsuji  Fukuoka Hiroshi  Koda Toshihiro  Sasaki Shigeo  Shimizu Hiroyasu  Yamanaka Shoji
Affiliation:Department of Materials Science and Technology, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan. kume@cc.gifu-u.ac.jp
Abstract:Vibrational properties of Ba doped Si clathrate are investigated at high pressures up to 20 GPa by Raman spectroscopy. Vibrations related with Ba encaged in the Si cages are observed below 100 cm(-1) by low-frequency Raman measurements of Ba8Si46 and Ba6.6Si46 clathrates. The high-pressure Raman spectra obtained for both compression and decompression processes reveal a new phase transition at 7 GPa, and the reversibility of the phase transition at 15 GPa. We investigate the mechanisms of these phase transitions, the interaction between the guest and host frame, and the volume dependence of the vibrational modes.
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