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Si基热光可调谐窄带平顶滤波器
引用本文:左玉华,蔡晓,毛容伟,王启明.Si基热光可调谐窄带平顶滤波器[J].半导体学报,2005,26(11):2218-2222.
作者姓名:左玉华  蔡晓  毛容伟  王启明
作者单位:中国科学院半导体研究所,集成光电子学国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子学国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子学国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子学国家重点实验室,北京,100083
基金项目:国家重点基础研究发展计划(973计划) , 国家科技攻关项目 , 中国科学院资助项目
摘    要:利用Si基键合技术、台阶型F-P腔结构以及Si良好的热光效应,研制了一种新型全Si基的热光调谐窄带平顶滤波器.器件的平顶宽度为2nm,3dB带宽为4.4nm,自由谱宽约为8.5nm,在外加电场作用下,共振峰红移3.3nm.

关 键 词:平顶滤波器  热光调谐  Si基  窄带
文章编号:0253-4177(2005)11-2218-05
收稿时间:2005-04-12
修稿时间:2005-05-20

Fabrication of a Novel Si-Based Thermo-Optical Tunable Flat-Top Filter with Narrow Band
Zuo Yuhu,Cai Xiao,Mao Rongwei and Wang Qiming.Fabrication of a Novel Si-Based Thermo-Optical Tunable Flat-Top Filter with Narrow Band[J].Chinese Journal of Semiconductors,2005,26(11):2218-2222.
Authors:Zuo Yuhu  Cai Xiao  Mao Rongwei and Wang Qiming
Institution:National Key Laboratory of Integrated Opto-Electronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Key Laboratory of Integrated Opto-Electronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100084,China;National Key Laboratory of Integrated Opto-Electronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100085,China;National Key Laboratory of Integrated Opto-Electronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China
Abstract:Based on a step-type F-P cavity structure,a novel all Si-based thermo-optical tunable flat-top filter with narrow band is fabricated,using our patent SOR(silicon-on-reflector) bonding technology.The device demonstrates a flat-top width of 2nm,3dB band of 4.4nm,FSR(free spectra range) of 8.5nm,and a red-shift of the transmittance peak of 3.3nm under the applied voltage.
Keywords:flat-top filter  thermo-optical tunability  Si-base  narrow band
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