In situ monitoring of laser-induced silicon oxidation |
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| Authors: | F. Micheli I. W. Boyd |
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| Affiliation: | (1) Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE London, UK |
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| Abstract: | A low cost, computer-controlled, in situ monitor of laser-induced oxidation of c-Si is described. Both oxide thickness and processing temperature can be determined, simultaneously and with high spatial resolution, from the sample reflectivity and a knowledge of the temperature dependence of the optical constants of silicon and silicon dioxide (available in the literature). |
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| Keywords: | 07.60.Hv 81.60.– j |
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