Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy |
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| Authors: | V G Shengurov S P Svetlov V Yu Chalkov B A Andreev Z F Krasil’nik D I Kryzhkov |
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| Institution: | (1) Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia;(2) Institute of the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia |
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| Abstract: | Erbium-doped epitaxial silicon layers were grown using two different growth techniques, namely, commonly used molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE). It is shown that an erbium-doped silicon epitaxial layer deposited through SPE on a cold substrate and subsequently annealed displays amore intense photoluminescence at a wavelength of 1.54 µm than do MBE-grown layers. |
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