Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP |
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| Authors: | Jingzhi Yin Xinqiang Wang Zongyou Yin Mingtao Li Zhengting Li Guotong Du Shuren Yang |
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| Institution: | Department of Electronic Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Jiefang Road 125#, Changchun, 130023, People's Republic of China |
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| Abstract: | We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6×1010 cm−2 at 4 monolayers InAs layer. |
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| Keywords: | Self-assembled quantum dots Ordered growth Tensile strained |
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