Spectroscopic ellipsometry of very thin tantalum pentoxide on Si

Variable angle spectroscopic ellipsometry of very thin T₂O₅ layers on Si and the previously published appropriate algorithm for data interpretation have been successfully applied in terms of accurate characterization of very thin T₂O₅/Si systems. The simulation procedure following a simple three and four layered model was used assuming an existence of inhomogeneous interfacial layers. Quantitative determination of the thicknesses and composition identification were achieved, both for the top T₂O₅ layer and for an interfacial layer. The constituents in the interfacial layer and its depth profiles were recognized.