Mechanism and kinetics of the diffusion of gold in silicon |
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Authors: | U. Gösele W. Frank A. Seeger |
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Affiliation: | 1. Institut für Physik, Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, D-7000, Stuttgart 80, Fed. Rep. Germany 2. Universit?t Stuttgart, Institut für Theoretische und Angewandte Physik, Pfaffenwaldring 57, D-7000, Stuttgart 80, Fed. Red. Germany
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Abstract: | The diffusion of Au in Si is known to take place via the interchange of Au atoms between substitutional (Au s ) and interstitial (Au i ) sites. So far it has generally been believed that this interchange involves lattice vacancies (V) and that it occurs via the Frank-Turnbull mechanism V+Au i ⇆Au s . It is stated in the literature that this model explains the observation that the Au s concentrationC s m in the centre of Au-diffused Si wafers increases with timet according to . We show that this statement is incorrect, i.e., the Frank-Turnbull model cannot account for the law. Such a dependence is expected in the case of Si wafers with a sufficiently low density of internal sinks for self-interstitials if the Au i −Au s interchange is controlled by the so-called kick-out mechanism Au i ⇆Au s +1. Since this mechanism involves self-interstitials (I) the present result is in accordance with the fact that under high-temperature equilibrium conditions the dominating intrinsic point defects in Si are self-interstitials and not vacancies as in Ge or metals. |
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Keywords: | 61.70 66 85.30 |
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