Atomic Design of Polarity of GaN Films Grown on SiC(0001) |
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| Authors: | DAI Xian-Qi WU Hua-Sheng XU Shi-Hong XIE Mao-Hai S.Y. Tong |
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| Affiliation: | 1. Physics Department, Henan Normal University, Xinxiang 453002, China;2. Physics Department, University of Hong Kong, Hong Kong, China;3. Department of Physics and Materials Science, City Universityof Hong Kong, Hong Kong, China |
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| Abstract: | Ab initio total energy calculations are used to determinethe interface structure of GaN films grown on 6H-SiC(0001) withdifferent substrate reconstructions. The results indicate thatGaN films grown on bare SiC(0001) are of the Ga-polarity, while GaNfilms grown on SiC(0001) with Si adlayer are of the N-polarityif there is no N-Si interchange at the interface. With the interchange,the GaN films are of the Ga-polarity. |
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| Keywords: | polarity total energy calculation adlayer interface |
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