聚乙烯咔唑／铟锡氧化物的界面分析

用原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了真空蒸镀聚乙烯咔唑(PVK)薄膜的表面形貌和PVK／铟锡氧化物(ITO)界面电子状态。结果表明，PVK分子虽然体积较大，但分布较均匀。XPS数据显示，在界面处PVK分子骨架和SnO2分子结构几乎没有发生变化，但PVK分子的侧基和In2O2分子结构发生了变化，因为界面处存在大量的，不能用制备过程的空气污染来解释的C-O键；在界面处，In2O3分子部分分解，所产生O原子替代PVK侧基上的H原子而形成C—O键；所产生的In原子则扩散至PVK内部。

Interface Analysis for the poly(N-vinylcarbazole)/indium-tin-oxide

The surface morphology of vacuum vapor deposited poly(N-vinylcarbazole)(PVK) thin film and the PVK/indium-tin-oxide(ITO) interface are studied by using the AFM and XPS respectively.The results showed that PVK molecules are large in size and relative uniform;the backbone of PVK molecules and the structure of SnO2 are almost unchanged,while the side group of PVK and the structure of In2O3 are probably modified in the PVK/ITO interface,because a large amount C-O bonds are found in the interface,which cannot be explained by air contamination;Some of the In2O3 molecules at the interface are partially decomposed,and the resulting O atoms substitute the H atoms of PVK subgroups and form the C-O bonds,and the In atoms diffuse into the PVK bulk.