首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Influence of binary/ternary complex of imprint ion on the preconcentration of uranium(VI) using ion imprinted polymer materials
Authors:P Metilda
Institution:Regional Research Laboratory, CSIR, Trivandrum 695019, India
Abstract:Ion imprinted polymer (IIP) materials were prepared for uranyl ion (imprint ion) by forming binary (5,7-dichloroquinoline-8-ol (DCQ) or 4-vinylpyridine (VP)) or ternary (5,7-dichloroquinoline-8-ol and 4-vinylpyridine) complexes in 2-methoxy ethanol (porogen) and copolymerizing in the presence of styrene and divinyl benzene as functional and crosslinking monomers, respectively and 2,2′-azobisisobutyronitrile as initiator. IIP particles were obtained by leaching the imprint ion in these polymer materials with 50% (v/v) hydrochloric acid, filtering, drying in an oven at 50 °C and grinding. Control polymer particles were also prepared under identical conditions. The above synthesized polymer particles were characterized by IR, CHN, X-ray diffraction, and pore size analyses. These leached polymer particles can now pick up uranyl ions from dilute aqueous solutions. The IIP particles obtained with ternary complex of uranyl ion alone gave quantitative enrichment of traces of uranyl ions from dilute aqueous solutions. The optimal pH for quantitative enrichment is 4.5-7.5 and eluted completely with 10 ml of 1.0 M HCl. The retention capacity of uranyl IIP particles was found to be 34.05 mg of uranyl ion per gram of polymer. Further, the percent extraction, distribution ratio, and selectivity coefficients of uranium and other selected inorganic ions were also evaluated. Five replicate determinations of 25 μg of uranium present in 1.0 l of aqueous solution gave a mean absorbance of 0.036 with a relative standard deviation of 2.50%. The detection limit corresponding to three times the standard deviation of the blank was found to be 5 μg l−1.
Keywords:Ion imprinting polymers  Uranyl ion  Preconcentration  Mixed ligand effects
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号