GaN纳米线的制备及光催化性能研究

采用化学气相沉积法(CVD)制备了大量的GaN纳米线，使用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、X射线能谱(EDS)和光致发光光谱仪(PL)对制备的样品形貌、结构、成分和发光性能进行了表征，并对其进行降解罗丹明B水溶液的光催化性能测试。结果表明，通过化学气相沉积法制备出了高质量的GaN纳米线，且GaN作为催化剂有一定的光催化效果。罗丹明B水溶液会因染料自身敏化作用而降解，但实验发现达到相同降解水平时无催化剂要比有催化剂至少多10 min。GaN作为催化剂时的降解速率k值为0.068 min-1，其数值相对于无催化剂时提高了17.2%。

Preparation and Photocatalytic Properties of GaN Nanowires

A large number of GaN nanowires are synthesized by the chemical vapor deposition (CVD) method. The morphology, microstructure, composition and optical properties of samples are characterized by field emission scanning electron microscope (SEM), X Ray diffraction (XRD), energy dispersive spectrometer (EDS) and Photoluminescence (PL), and the photocatalytic activity of GaN nanowires as photocatalyst is tested via the degradation of rhodamine B aqueous solution under the UV light. The results show that high quality GaN nanowires fabricated by chemical vapor deposition and GaN as a catalyst have a certain photocatalytic effect. On the one hand, the dye sensitization effect will degrade Rhodamine B aqueous solution; on the other hand, it takes 10 minutes more to achieve the degradation level without catalyst than with GaN as the catalyst. This shows that GaN plays a role in the photocatalytic effect and a small amount of GaN significantly increases its photocatalytic effect. The photodegradation rate constant k of GaN is 0.068 min 1, 17.2% higher in efficiency than that with no photocatalyst.