Structure of a time-variable photoresponse from semiconductor sensors |
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| Authors: | But A V Migal’ V P Fomin A S |
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| Institution: | 1.Zhukovsky National University “Kharkov Aviation Institute”, ul. Chkalova 17, Khar’kov, 61070, Ukraine
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| Abstract: | It is found that the conversion of time-variable photoresponse I(t) from a crystal to signature I(t) − dI/dt of the phase plane makes it possible to determine partial contributions from the constituents of the photoresponse and their
interrelation. In addition, such a procedure allows one to introduce the integrative indices of stability (B
din) and asymmetry (K
λ, E
) of the photoresponse’s structure, which reflect the influence of external and internal factors, respectively. |
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| Keywords: | |
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