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Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 μm
Authors:S Civi?  AN Imenkov  AP Danilova  NM Kolchanova  VV Sherstnev  YP Yakovlev  AD Walters
Institution:(1) Ioffe Phisico-Technical Institute, RAS, 26 Polytechnicheskaya, St. Petersberg, Russia, RU;(2) J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 3, 182 23 Prague 8, Czech Republic, CZ;(3) Laboratoire de Physique des Lasers, Atomes et Molécules, Centre d’Etudes et de Recherches Lasers et Applications, Université des Sciences et Technologies de Lille, 59655 Villeneuve d’Ascq, Cedex, France (Fax: +33-320/336-463, E-mail: adam.walters@univ-lille1.fr), FR
Abstract:A new type of multimode semiconductor laser, based on InAsSb/InAsSbP heterostructures, is described. This continuous laser working in a broad range of temperatures (30–100 K) was tested using a closed-cycle He-cryostat and its quality was demonstrated using the laser spectroscopy of gases absorbing in the 2800 cm-1 region. Two different laser modes were used to increase the spectral range. The spectral characteristics and tunability of the laser were explored as a function of heat-sink temperature and drive current with the aim of developing its use for high–resolution spectroscopy. The laser has potential applications in the field of chemistry, atmospheric research and the study of the kinetics of reactive species. Received: 18 October 1999 / Revised version: 10 May 2000 / Published online: 16 August 2000
Keywords:PACS: 33  20 Ea  33  90 +d  07  57  Hm
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