Diagnostics of Radiative Processes in Semiconductors,Excited by Ultrashort High-Voltage Pulses |
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| Authors: | V. G. Bagramov G. L. Danielyan A. S. Nasibov V. A. Podvyznikov I. D. Tasmagulov V. K. Chevokin |
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| Affiliation: | 1.Lebedev Physical Institute,Russian Academy of Sciences,Moscow,Russia;2.Prokhorov General Physics Institute,Russian Academy of Sciences,Moscow,Russia |
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| Abstract: | A configuration of the multichannel system for diagnostics of radiative processes in various regions of the discharge appearing in semiconductors in response to high-voltage pulses is considered. The system allows real-time recording of spectra, dynamics, and energy of radiation in nine emitting object zones 200–400 μm in diameter. The recording equipment is connected to objects under study by fiber-optic cables (FOCs). The system temporal resolution can be varied from 40 to 250 ps depending on the FOC diameter. An example of the simultaneous study of spatiotemporal characteristics of the streamer discharge at seven points of a CdS x Se1?x semiconductor wafer is given. |
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