Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a chargestorage layer, either between trapped electrons and trapped holes orbetween trapped carriers and free carriers, on charge trappingmemory cell's performances by numerical simulation. Recombination isan indispensable mechanism in charge trapping memory. It helpscharge convert process between negative and positive charges in thecharge storage layer during charge trapping memoryprogramming/erasing operation. It can affect the speed ofprogramming and erasing operations.