Adsorption of H2S,H2O and O2 on Si(111) surfaces |
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| Authors: | K. Fujiwara H. Ogata M. Nishijima |
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| Affiliation: | Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, Japan |
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| Abstract: | Electron energy-loss spectroscopy has been applied to the study of Si(111) surfaces covered with H2S, H2O and O2 at room temperature and the surfaces annealed at ～ 600°C. The experimental results strongly suggest that H2S and H2O adsorb in the molecular states at room temperature. It is proposed that O2 is first adsorbed in a molecular state, then adsorbs as atoms, and finally oxidizes forming SiO2. |
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