Enhancement of hole drift velocity in amorphous As2Se3 by iodine doping |
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Authors: | G Pfister AR Melnyk ME Scharfe |
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Institution: | Xerox Webster Research Laboratories, Webster, NY 14580, USA |
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Abstract: | The addition of ~ 0.6 at.% iodine to approximately stoichiometric a-As2Se3 enhances the hole drift velocity by more than a decade but does not affect its field, thickness and temperature dependence or the degree of disorder. It is speculated that iodine reduces the ratio of trapping to hopping states in the trap-controlled hopping process which recently has been proposed for a-As2Se3. |
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