Performance improvement in pentacene organic thin film transistors by inserting a C<sub>60</sub> ultrathin layer期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Performance improvement in pentacene organic thin film transistors by inserting a C₆₀ ultrathin layer

Authors:	Sun Qin-Jun Xu Zheng Zhao Su-Ling Zhang Fu-Jun Gao Li-Yan

Affiliation:	Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China

Abstract:	The contact effect on the performances of organic thin film transistors is studied here. A C₆₀ ultrathin layer is inserted between Al source--drain electrode and pentacene to reduce the contact resistance. By a 3 nm C₆₀ modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm²/(V·s). It means that inserting a C₆₀ ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm²/(V·s). It indicates that further reducing the contact resistance of OTFTs should be carried out.

Keywords:	organic thin film transistors field effect mobility contact effect charge drift
本文献已被维普等数据库收录！
	点击此处可从《中国物理 B》浏览原始摘要信息
	点击此处可从《中国物理 B》下载免费的PDF全文

设为首页 | 免责声明 | 关于勤云 | 加入收藏