| 熔体配比对SIGaAs单晶性能的影响 |
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| 引用本文： | 宋群厚.熔体配比对SIGaAs单晶性能的影响[J].微纳电子技术,1999(6). |
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| 作者姓名： | 宋群厚 |
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| 作者单位： | 南京电子器件研究所!南京210016 |
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| 摘 要： | 系统地讨论了熔体的配比与ＧａＡｓ单晶质量之间的关系，尤其对半绝缘性能、光敏性能以及均匀性方面进行了分析， 以期提高ＧａＡｓ单晶的质量
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| 关 键 词： | 配比 半绝缘LECGaAs 光敏性 |
Influence of Melt Stoichiometry on Electrical Properties in Semi Insulating LEC GaAs |
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| Song Qunhou.Influence of Melt Stoichiometry on Electrical Properties in Semi Insulating LEC GaAs[J].Micronanoelectronic Technology,1999(6). |
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| Authors: | Song Qunhou |
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| Abstract: | This paper describes the effect of melt composition on electrical properties in semi insulating LEC GaAs,especially on stoichiometry dependent deep levels (EL 2) and some defects caused by melt nonstoichiometry.In order to grow perfect single crystal,we must understand the strong relationship between melt composition and crystal electrical properties,such as resistivity,mobility and trap induced photoconductivity. |
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| Keywords: | Stoichiometry Semi Insulating LEC GaAs Photoconductivity |
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