| 用正性光刻胶进行GaAs IC的非辅助直接剥离技术 |
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| 引用本文： | 廉亚光. 用正性光刻胶进行GaAs IC的非辅助直接剥离技术[J]. 微纳电子技术, 1991, 0(3) |
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| 作者姓名： | 廉亚光 |
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| 作者单位： | 机电部第13研究所 石家庄 |
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| 摘 要： | 在GaAs IC的实际制作中,通过采用氯代苯对AZ-1350J光刻胶进行表面韧化处理,得到一近似的负窗孔,并在二次连线时,成功地剥出了最小间距为4μm和最细线条为3μm的TiPtAu条。
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| 关 键 词： | 集成电路工艺 剥离技术 光致抗蚀剂 |
Nonassistant Single-Step Lift-off Technology Using Positive Photoresists in GaAs IC |
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| Lian Yaguang. Nonassistant Single-Step Lift-off Technology Using Positive Photoresists in GaAs IC[J]. Micronanoelectronic Technology, 1991, 0(3) |
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| Authors: | Lian Yaguang |
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| Abstract: | An approximate negative window Was obtained by modifying the surface of AZ-1350 positive photoresist with chlorobenzene in GaAs IC actual work. TiPtAu line of the smallest distance of 4μm and the thinnest line of 3μm has been successfully lifted off in the second routing. |
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| Keywords: | Integrated circuit technology Lift-off technology Photoresist |
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