The thermal stability of Al(1%wtSi)/Zr EUV mirrors |
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Authors: | Qi Zhong Zhong Zhang Jingtao Zhu Zhanshan Wang Philippe Jonnard Karine Le Guen Yanyan Yuan Jean-Michel André Hongjun Zhou Tonglin Huo |
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Institution: | 1. MOE Key Laboratory of Advanced Micro-Structured Materials, Institute of Precision Optical Engineering, Department of Physics, Tongji University, Shanghai, 200092, China 2. Laboratoire de Chimie Physique??Mati??re Rayonnement, UPMC Univ Paris 06, CNRS UMR 7614, 11 rue Pierre et Marie Curie, 75231, Paris cedex 05, France 3. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
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Abstract: | Six Al(1%wtSi)/Zr multilayers are deposited on Si substrates by using the direct-current magnetron sputtering system, and annealed from 100?°C to 500?°C temperature in a vacuum furnace for 1?h. To evaluate the thermal stability of Al(1%wtSi)/Zr multilayers, the multilayers were characterized by grazing incidence X-ray reflectance, X-ray diffraction, X-ray emission spectroscopy, and near-normal incident extreme ultraviolet (EUV) reflection. The symmetric and asymmetric interlayer models are used to present the interfacial structure before and after 300?°C. The Al(1%wtSi)/Zr multilayer annealed up to 200?°C maintains the initial symmetric multilayer structure, and keeps almost the similar EUV reflectivity as the nonannealed sample. From 300?°C, interdiffusion is much greater at the Zr/Al interface compared with the Al/Zr interface. And the interfacial phases of Al-Zr alloy transform from amorphous to polycrystalline, which induces the deterioration of multilayer structure and the decrease of EUV reflectivity. However, up to 500?°C, the polycrystalline Al-Zr compound does not destroy the multilayer completely. |
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