Effect of Temperature Variation on the Characteristics of Microwave Power AlGaN/GaN MODFET |
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Authors: | Hasina F Huq and Syed K Islam |
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Institution: | (1) Department of Electrical and Computer Engineering, The University of Tennessee, Knoxville, TN 37996, USA |
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Abstract: | The prime motivation for developing the proposed model of AlGaN/GaN microwave power device is to demonstrate its inherent
ability to operate at much higher temperature. An investigation of temperature model of a 1 μm gate AlGaN/GaN enhancement
mode n-type modulation-doped field effect transistor (MODFET) is presented. An analytical temperature model based on modified
charge control equations is developed. The proposed model handles higher voltages and show stable operation at higher temperatures.
The investigated temperature range is from 100 °K–600 °K. The critical parameters of the proposed device are the maximum drain
current (IDmax), the threshold voltage (Vth), the peak dc trans-conductance (gm), and unity current gain cut-off frequency (fT). The calculated values of fT (10–70 GHz) at elevated temperature suggest that the operation of the proposed device has sufficiently high current handling
capacity. The temperature effect on saturation current, cutoff frequency, and trans-conductance behavior predict the device
behavior at elevated temperatures. The analysis and simulation results on the transport characteristics of the MODFET structure
is compared with the previously measured experimental data at room temperature. The calculated critical parameters suggest
that the proposed device could survive in extreme environments. |
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Keywords: | AlGaN/GaN MODFET two dimensional electron gas (2DEG) unity current gain cut-off frequency (fT) |
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