| Al/GaAs界面反应的XPS研究 |
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| 引用本文： | 戴道宣,唐厚舜,倪宇红,余夕同. Al/GaAs界面反应的XPS研究[J]. 物理学报, 1983, 32(10): 1328-1332 |
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| 作者姓名： | 戴道宣 唐厚舜 倪宇红 余夕同 |
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| 作者单位： | 复旦大学现代物理研究所 |
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| 摘 要： | 用XPS研究了清洁无序GaAs表面沉积超薄Al膜后的界面反应,结果表明,原沉积于GaAs表面的Al能进入GaAs衬底取代Ga形成AlAs,而通过Al-Ga替位反应释放出来的Ga则残留在衬底表面,提出了Ga/AlAs+GaAs/GaAs三层结构模型。关键词：
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| 收稿时间： | 1982-10-11 |
AN INVESTIGATION OF Al/GaAs INTERFACE REACTION BY XPS |
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| DAI DAO-XUAN,TANG HOU-SHUN,NI YU-HONG and YU XI-TONG. AN INVESTIGATION OF Al/GaAs INTERFACE REACTION BY XPS[J]. Acta Physica Sinica, 1983, 32(10): 1328-1332 |
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| Authors: | DAI DAO-XUAN TANG HOU-SHUN NI YU-HONG YU XI-TONG |
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| Abstract: | After deposition of a layer of super-thin A film on a clean disordered GaAs surface, the Al/GaAs interface reaction is studied by XPS. The results show that the Al atom can penetrate into GaAs substrate to form AlAs with freed Ga left on GaAs substrate surface by Al-Ga replacement reaction. A Ga/AlAs + GaAs/GaAs three layer model is proposed. |
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