钼网衬底上大面积硅纳米线的制备及其光催化性能研究

硅纳米材料广泛应用于光功能导向的各个领域,发展针对光功能应用及一维硅纳米结构的规模化可控制备方法,实现硅纳米结构的宏量制备,将为硅纳米结构的应用提供材料保障。本文采用简单的化学气相沉积法成功地在Mo网衬底上制备了大面积的硅纳米线(SiNWs),并通过扫描电子显微镜、透射电子显微镜、X射线粉末衍射仪、拉曼光谱仪,对制备的SiNWs进行了详细的研究。通过在低功率紫外光照射下SiNWs对罗丹明B和甲基蓝的光降解能力的研究,发现在Mo网衬底上生长的SiNWs对于有机染料具有很好的降解能力。

Large-scale Synthesis of Silicon Nanowires on Molybdenum Nets for High-efficiency Photodegradation

Si nano-materials are wildly used in the field of photocatalyst, solar cell, photodetector due to their excellent photo-absorption ability. So the controlled and large-scale synthesis of one dimensional Si nano-materials becomes the key which affects their applications. In this report, we used a simple chemical vapor deposition (CVD) method to grow large-scale Si nanowires (SiNWs) on molybdenum (Mo) nets substrate. And the characteristics of SiNWs were detailedly analyzed by scanning electron microscope, transmission electron microscope, X-ray diffraction and Raman spectrum. Moreover, the photocatalytic properties of as-grown SiNWs were examined by the photodegradation of Rhodamine B and Methylene Blue under low power ultraviolet (UV) light. In addition, the results show that SiNWs growing on Mo nets substrate have a high photodegration efficient for organic dyes.