Si1−xGex/Si multi-quantum well phototransistor for near-infrared operation |
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Authors: | Z. Pei L. S. Lai H. P. Hwang Y. T. Tseng C. S. Liang M. -J. Tsai |
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Affiliation: | Electronics Research and Service Organization, Industrial Technology Research Institute, Building 11 195-4, sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, ROC |
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Abstract: | For the first time in the literature, we report the monolithic integration of SiGe near-infrared phototransistor and planar hetero-junction bipolar transistor (HBT). The phototransistor is made with SiGe/Si multi-quantum well structure (MQW_PHT). At room temperature, the MQW_PHT reveals an optical responsivity of 1904 mW/A at 0.85 μm and 1.25 mW/A at 1.3 μm under the reversed bias of VCE=1.5 V. For electrical DC and microwave performance, the SiGe HBT has a current gain of 160 and a cut-off frequency (fT) of 25 GHz, respectively. |
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Keywords: | Phototransistor Multi-quantum well |
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