Electron probe X-ray microanalysis as a non-destructive method for the quantitative determination of ion-implanted impurities in silicon

An urgent need exists for non-destructive methods of analysis which can provide information both on the depth distributions and cumulative quantity of impurity in semiconductors. A proposal for using electron probe X-ray microanalysis is presented in this paper. The method is based on the equation which relates the X-ray intensity of impurity atoms to their depth distribution in the specimen.Two different approaches are presented: