Simulation of hole-mobility in doped relaxed and strained Ge |
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Authors: | Jeremy R Watling Craig RiddetKah H Chan Asen Asenov |
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Institution: | Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, Scotland, UK |
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Abstract: | As silicon CMOS begins to reach the limits of its performance, alternative channel materials are being considered. Thus there is renewed interest in employing Germanium for p-MOSFETs, due to the significant improvement in hole mobility as compared to silicon for undoped materials. Of considerable interest from a device point of view is the transport in doped layers. We investigate hole transport at high carrier-densities in doped Germanium layers using a bulk 6-band k·p Monte Carlo simulator, and show that both dynamic and multi-ion screening play a significant role in describing the resulting transport. |
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Keywords: | Germanium p-MOSFET |
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