Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET |
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Authors: | KH Chan B BenbakhtiC Riddet JR WatlingA Asenov |
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Institution: | Device Modelling Group, School of Engineering, University of Glasgow, G12 8LT, UK |
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Abstract: | In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential. |
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Keywords: | Germanium p-MOSFET Interface state trap density Hole Parasitic gate capacitance Mobility |
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